Terahertz imaging with Si MOSFET focal-plane arrays

A. Lisauskas; D. Glaab; H. G. Roskos; E. Oejefors; U. R. Pfeiffer

doi:10.1117/12.809552

12 February 2009 Terahertz imaging with Si MOSFET focal-plane arrays

A. Lisauskas, D. Glaab, H. G. Roskos, E. Oejefors, U. R. Pfeiffer

Proceedings Volume 7215, Terahertz Technology and Applications II; 72150J (2009) https://doi.org/10.1117/12.809552
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

We report on imaging at terahertz frequencies using a 3x5 Si MOSFET focal-plane array (FPA) processed by a 0.25-μm CMOS technology. Each pixel of the FPA consists of a 645-GHz patch antenna coupled to a FET detector and a 43-dB voltage amplifier with a 1.6-MHz bandwidth. We achieve a typical single-pixel responsivity of 80 kV/W and a noise-equivalent power (NEP) of 300 pW/√Hz at 30-kHz. The performance data of these all-CMOS devices pave the way for the realization of broad-band THz detectors and FPAs for video-rate active imaging on the basis of established low-cost and integration-friendly CMOS technology.

Citation Download Citation

A. Lisauskas, D. Glaab, H. G. Roskos, E. Oejefors, and U. R. Pfeiffer "Terahertz imaging with Si MOSFET focal-plane arrays", Proc. SPIE 7215, Terahertz Technology and Applications II, 72150J (12 February 2009); https://doi.org/10.1117/12.809552

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