GaN-based vertical cavities on highly reflective and crack-free nitride distributed Bragg reflectors

X. Ni; R. Shimada; T. D. Kang; J. Leach; Ü. Özgür; H. Morkoç

doi:10.1117/12.807902

19 February 2009 GaN-based vertical cavities on highly reflective and crack-free nitride distributed Bragg reflectors

X. Ni, R. Shimada, T. D. Kang, J. Leach, Ü. Özgür, H. Morkoç

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 72162F (2009) https://doi.org/10.1117/12.807902
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

We report on GaN-based vertical cavities on highly reflective and crack-free 40.5 pair of AlGaN/GaN distributed Bragg reflectors (DBRs) by using a selective growth method to avoid wafer cracking that is commonly observed in conventional planar Al(Ga)N/GaN DBRs. An Al_0.46Ga_0.54N/GaN DBR with ~ 98% reflectivity was selectively grown with square patterns of up to 150 × 150 μm² in size, which were separated from each other by 10 μm wide SiO₂ mask stripes. Vertical cavity structures employing InGaN/InGaN multiple quantum wells (MQWs) were grown on these crackfree patterned DBRs and capped with 13 pair SiO₂/SiNx DBRs to complete the full cavity structure. A cavity mode at ~ 442 nm in 150 × 150 μm² area was observed, having a quality factor of ~300. The selective growth technique to eliminate crack formation is very promising for the fabrication of nitride-based vertical-cavity surface emitting laser devices.

Citation Download Citation

X. Ni, R. Shimada, T. D. Kang, J. Leach, Ü. Özgür, and H. Morkoç "GaN-based vertical cavities on highly reflective and crack-free nitride distributed Bragg reflectors", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72162F (19 February 2009); https://doi.org/10.1117/12.807902

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