Hybrid silicon modulators

Hui-Wen Chen; Ying-hao Kuo; J. E. Bowers

doi:10.1117/12.805967

17 February 2009 Hybrid silicon modulators

Hui-Wen Chen, Ying-hao Kuo, J. E. Bowers

Proceedings Volume 7220, Silicon Photonics IV; 722008 (2009) https://doi.org/10.1117/12.805967
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

A number of active elements have been demonstrated using the hybrid silicon evanescent platform, including lasers, amplifiers and detectors. In this paper, two types of hybrid silicon modulators, fulfilling the building blocks in optical communication on this platform, will be presented. A hybrid silicon electroabsorption modulator, suitable for high speed interconnects, with 10 dB extinction ratio at -5 V and 16 GHz modulation bandwidth is demonstrated. In addition a hybrid silicon Mach-Zehnder modulator utilizing carrier depletion in multiple quantum wells is proved with 2 V-mm voltage-length product, 150 nm optical bandwidth and a large signal modulation up to 10 Gb/s.

Citation Download Citation

Hui-Wen Chen, Ying-hao Kuo, and J. E. Bowers "Hybrid silicon modulators", Proc. SPIE 7220, Silicon Photonics IV, 722008 (17 February 2009); https://doi.org/10.1117/12.805967

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