Paper
26 January 2009 Single-mode 2.4μm InGaAsSb/AlGaAsSb distributed feedback lasers for gas sensing
James A. Gupta, Pedro J. Barrios, Jean Lapointe, Geof C. Aers, Daniel Poitras, Craig Storey, Philip Waldron
Author Affiliations +
Abstract
Single-mode laser diodes on GaSb substrates were developed using InGaAsSb/AlGaAsSb triple quantum well active regions grown by molecular beam epitaxy. The devices were fabricated using lateral Cr gratings, with a grating pitch designed to coincide with a strong absorption feature of HF gas, deposited adjacent to a dry-etched narrow ridge waveguide. High sidemode suppression was achieved, and in 20°C continuous-wave operation, devices with a 400μm-long cavity provided 4.5mW total output power at the 2396nm target wavelength. Anti-reflection and high-reflection facet coatings exhibited no deleterious effects on the laser tunability or mode quality, thus allowing the preferential extraction of output power from a single laser facet.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James A. Gupta, Pedro J. Barrios, Jean Lapointe, Geof C. Aers, Daniel Poitras, Craig Storey, and Philip Waldron "Single-mode 2.4μm InGaAsSb/AlGaAsSb distributed feedback lasers for gas sensing", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72220A (26 January 2009); https://doi.org/10.1117/12.817849
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KEYWORDS
Gas lasers

Chromium

Current controlled current source

Gallium antimonide

Laser development

Molecular beam epitaxy

Nanophotonics

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