Fabrication of sub-10-nm pattern using diblock copolymer

Naoko Kihara; Kazutaka Takizawa; Hiroyuki Hieda

doi:10.1117/12.812210

18 March 2009 Fabrication of sub-10-nm pattern using diblock copolymer

Naoko Kihara, Kazutaka Takizawa, Hiroyuki Hieda

Proceedings Volume 7271, Alternative Lithographic Technologies; 72712T (2009) https://doi.org/10.1117/12.812210
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Fabrication of 16 nm pitch L&S pattern was investigated by applying self-organizing material as etching mask. For the purpose, diblock copolymer template composed of polystyrene-polyethyleneoxide (PS-PEO) and spin-on-glass (SOG) was utilized. The material was prepared to form polystyrene cylinder phase in PEO phase. SOG was located in the PEO phase, because of its hydrophilic property. After spin-coating on a Si wafer, film was baked at high temperature. By the thermal treatment, PS cylinder phase was eliminated to form cavities in the cured SOG matrix. Using the cured Si matrix pattern as etching mask, Si substrate was etched. When baking was carried out at 300° C, bridge-like defects were observed on Si pattern. The thermogravimetric examination indicated the baking at 400° C could reduce the defects. Applying the optimized process, 16nm pitch L&S pattern was transferred on Si substrate.

Citation Download Citation

Naoko Kihara, Kazutaka Takizawa, and Hiroyuki Hieda "Fabrication of sub-10-nm pattern using diblock copolymer", Proc. SPIE 7271, Alternative Lithographic Technologies, 72712T (18 March 2009); https://doi.org/10.1117/12.812210

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