The effects of passivation and temperature on the strain of Al0.22Ga0.78N /GaN heterostructuers

K. X. Zhang; H. Y. Xie; J. N. Zhang; D. J. Chen; G. D. Wang; M. Y. Liu; A. M. Zhang

doi:10.1117/12.839301

25 August 2009 The effects of passivation and temperature on the strain of Al_0.22Ga_0.78N /GaN heterostructuers

K. X. Zhang, H. Y. Xie, J. N. Zhang, D. J. Chen, G. D. Wang, M. Y. Liu, A. M. Zhang

Proceedings Volume 7375, ICEM 2008: International Conference on Experimental Mechanics 2008; 73754B (2009) https://doi.org/10.1117/12.839301
Event: International Conference on Experimental Mechanics 2008 and Seventh Asian Conference on Experimental Mechanics, 2008, Nanjing, China

Abstract

The temperature dependencies of c-axis strain in Al_0.22Ga_0.78N/GaN heterostructure, with and without Si₃N₄ passivation layer, were investigated at temperatures from room temperature (300K) to 813K using high resolution X-ray diffraction (HRXRD). The unpassivated Al_0.22Ga_0.78N layers total strain decrease is about 6% and 8% for the 50-nm- and 100-nm-thick Al_0.22Ga_0.78N layers, respectively, at whole temperature range from 300K to 813K in our measurements. The passivated Al_0.22Ga_0.78N layers total strain decrease is about 12% and 0% for the 50-nm- and 100-nm-thick Al_0.22Ga_0.78N layers, respectively, at the whole temperature range in our measurements. And at the common devices working temperature range, after passivating, the strain increase is about 4% and 8% of the 50-nm-thick Al_0.22Ga_0.78N and 100-nm-thick layers with temperature from 300K to 400K and 300K to 420K, respectively. The results indicate that a reasonable passivation layer is necessary to effectively impede strain decrease of Al_xGa_1-xN/GaN interface at the higher temperatures and that a passivation layer is conduce to increase c-axis strain at the working temperature range, hence passivation may improve the thermal stability and electricity characteristics of Al_xGa_1-xN/GaN heterostructures.

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K. X. Zhang, H. Y. Xie, J. N. Zhang, D. J. Chen, G. D. Wang, M. Y. Liu, and A. M. Zhang "The effects of passivation and temperature on the strain of Al_0.22Ga_0.78N /GaN heterostructuers", Proc. SPIE 7375, ICEM 2008: International Conference on Experimental Mechanics 2008, 73754B (25 August 2009); https://doi.org/10.1117/12.839301

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KEYWORDS

Temperature metrology

Heterojunctions

Aluminum

Gallium

Gallium nitride

X-ray diffraction

Aluminum nitride

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