Growth and electronic properties of Ge-SixGe1-x core-shell nanowire heterostructures

Junghyo Nah; K. M. Varahramyan; E.-S. Liu; A. Opotowsky; D. Ferrer; S. K. Banerjee; E. Tutuc

doi:10.1117/12.829159

3 September 2009 Growth and electronic properties of Ge-Si_xGe_1-x core-shell nanowire heterostructures

Junghyo Nah, K. M. Varahramyan, E.-S. Liu, A. Opotowsky, D. Ferrer, S. K. Banerjee, E. Tutuc

Proceedings Volume 7406, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials; 74060O (2009) https://doi.org/10.1117/12.829159
Event: SPIE NanoScience + Engineering, 2009, San Diego, California, United States

Abstract

We report the growth and characterization of Ge-Si_xGe_1-x core-shell nanowires. Using a combination of vapor-liquid-solid nanowire growth and ultra-high-vacuum chemical vapor deposition conformal growth, we demonstrate the realization of epitaxial Ge-Si_xGe_1-x core-shell nanowire heterostructures with tunable shell content. We investigate the intrinsic electronic properties of Ge-Si_xGe_1-x core-shell nanowires using back-gate dependent two- and four-terminal resistance measurements, and demonstrate high performance Ge-Si_xGe_1-x core-shell nanowire field-effect transistors with highly doped source and drain.

Citation Download Citation

Junghyo Nah, K. M. Varahramyan, E.-S. Liu, A. Opotowsky, D. Ferrer, S. K. Banerjee, and E. Tutuc "Growth and electronic properties of Ge-Si_xGe_1-x core-shell nanowire heterostructures", Proc. SPIE 7406, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials, 74060O (3 September 2009); https://doi.org/10.1117/12.829159

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