The metal hard-mask approach for contact patterning

J.-F. de Marneffe; F. Lazzarino; D. Goossens; Th. Conard; I. Hoflijk; D. Shamiryan; H. Struyf; W. Boullart

doi:10.1117/12.854680

26 February 2010 The metal hard-mask approach for contact patterning

J.-F. de Marneffe, F. Lazzarino, D. Goossens, Th. Conard, I. Hoflijk, D. Shamiryan, H. Struyf, W. Boullart

Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 752106 (2010) https://doi.org/10.1117/12.854680
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation

Abstract

Within the metal hard-mask (MHM) approach for contact patterning, the SiO₂:TiN and SiO₂:Si₃N₄ etch selectivities have been studied for an Ar-C₄F₈-CO-based discharge in a dual-frequency capacitive coupled plasma (DFC-CCP) chamber, as a function of gas additives and driving 2 MHz power. It is found that the O₂ addition does dramatically decrease the SiO₂:TiN and SiO₂:Si₃N₄ selectivities, while 2MHz power raises the SiO₂:Si₃N₄ but decreases the SiO₂:TiN. The observed selectivity result from a balance between the sputtering by inert ions and the growth of a passivating fluorocarbon film, which thickness and composition depends on the substrate nature. Selectivity is also influenced by species kinetics at the plasma-surface interface.

Citation Download Citation

J.-F. de Marneffe, F. Lazzarino, D. Goossens, Th. Conard, I. Hoflijk, D. Shamiryan, H. Struyf, and W. Boullart "The metal hard-mask approach for contact patterning", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 752106 (26 February 2010); https://doi.org/10.1117/12.854680

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