Formation of Ge/Cu ohmic contacts to n-GaAs with atomic hydrogen pre-annealing step

E. Erofeev; V. Kagadei

doi:10.1117/12.853639

26 February 2010 Formation of Ge/Cu ohmic contacts to n-GaAs with atomic hydrogen pre-annealing step

E. Erofeev, V. Kagadei

Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 75210K (2010) https://doi.org/10.1117/12.853639
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation

Abstract

The work investigated the formation processes of Ge/Cu ohmic contacts to n-GaAs with a germanium content of 30-55% in the film. A comparative analysis was undertaken of the influence of the conditions of a first preliminary annealing carried out in situ with the metallization deposition process, on the value of the specific contact resistance obtained after a second annealing carried out ex situ in a nitrogen environment. It was shown that when the first preliminary annealing is carried out in a flow of atomic hydrogen with a flow density of atoms of 10¹³-10¹⁶ at. cm² s^-1 a reduction in specific contact resistance of 2-2.5 times is observed, and also a more homogeneous metallization is formed with a finer microcrystal structure, in comparison with when the first, preliminary annealing is carried out under vacuum. The reduction in specific contact resistance is apparently connected with the action of the hydrogen atoms which minimise the rate of the oxidizing reactions and activate solid phase reactions forming the ohmic contact during the thermal treatment process.

Citation Download Citation

E. Erofeev and V. Kagadei "Formation of Ge/Cu ohmic contacts to n-GaAs with atomic hydrogen pre-annealing step", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210K (26 February 2010); https://doi.org/10.1117/12.853639

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