Effects of annealing on InAsSb films grown by the modified LPE technique

Changhong Sun; Shuhong Hu; Qiwei Wang; Jie Wu; Ning Dai

doi:10.1117/12.865685

22 October 2010 Effects of annealing on InAsSb films grown by the modified LPE technique

Changhong Sun, Shuhong Hu, Qiwei Wang, Jie Wu, Ning Dai

Proceedings Volume 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology; 76584T (2010) https://doi.org/10.1117/12.865685
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China

Abstract

We have studied the annealing effects on InAsSb thick films grown by the modified liquid phase epitaxy (LPE) technique. Appropriate annealing treatment can efficiently eliminate Sb vacancy and stain which are formed during growing process, thus it is necessary to study the influence of annealing condition (temperature, ambient, time and cooling rate) on the properties of InAsSb epilayer. The X-ray diffraction measurement (XRD) showed the annealed InAsSb films were polycrystalline with (111)-preferred orientation, except for the two samples annealed with 350 °C for 15 hours and with rapid cooling rate, respectively, which exhibited a (100)-preferred orientation. The Fourier transform infrared (FTIR) revealed a cut off wavelength more than 10 μm for the samples. Also, the infrared transmittance would be improved due to decreasing of film defects by appropriate annealing treatment. Measurement of electrical properties for samples revealed the increase of electron mobility and the reduce of carrier concentration at 77K when keeping anneal temperature low at 350 °C and extending anneal time, indicating the electrical improvement of the InAsSb layers.

Citation Download Citation

Changhong Sun, Shuhong Hu, Qiwei Wang, Jie Wu, and Ning Dai "Effects of annealing on InAsSb films grown by the modified LPE technique", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76584T (22 October 2010); https://doi.org/10.1117/12.865685

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available