An Improved Technique For 1/4 Micrometer Gate Length Gaas Mesfet Fabrication By Optical Lithography

Brad D. Cantos; Ronald D. Remba

doi:10.1117/12.940354

30 June 1987 An Improved Technique For 1/4 Micrometer Gate Length Gaas Mesfet Fabrication By Optical Lithography

Brad D. Cantos, Ronald D. Remba

Proceedings Volume 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI; (1987) https://doi.org/10.1117/12.940354
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

This paper describes an innovative photolithographic method for the fabrication of 1/4 micrometer gates in gallium arsenide Metal-Semiconductor Field Effect Transistors (GaAs MESFETs). The method utilizes image reversal technology, in which negative polarity images are produced in positive diazide photoresists. This work describes improvements obtained using ammonia as the image reversal catalyst over work previously described which used imidazole [1]. The ammonia based image reversal process is characterized with respect to sensitivity to several process parameters and uniformity of the resultant linewidth. The linewidth uniformity attained using this process is + 0.03 micrometer over a 50 mm diameter wafer and is currently used to fabricate 1/4 micrometer gate MESFETs on gallium arsenide.

Citation Download Citation

Brad D. Cantos and Ronald D. Remba "An Improved Technique For 1/4 Micrometer Gate Length Gaas Mesfet Fabrication By Optical Lithography", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); https://doi.org/10.1117/12.940354

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