Semiconductor plasmonic metamaterials for near-infrared and telecommunication wavelength

Gururaj V. Naik; Vladimir M. Shalaev; Alexandra Boltasseva

doi:10.1117/12.863631

10 September 2010 Semiconductor plasmonic metamaterials for near-infrared and telecommunication wavelength

Gururaj V. Naik, Vladimir M. Shalaev, Alexandra Boltasseva

Proceedings Volume 7754, Metamaterials: Fundamentals and Applications III; 77540M (2010) https://doi.org/10.1117/12.863631
Event: SPIE NanoScience + Engineering, 2010, San Diego, California, United States

Abstract

Plasmonic materials have conventionally been gold and silver in optical frequencies. However, these conventional metals in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses. With the advent of metamaterials, these metals pose a serious bottle-neck in the performances of metamaterial-based devices not only due to the large losses associated with them in the NIR and visible wavelengths, but also their magnitudes of real permittivity are too large. Both of these problems could be solved by using semiconductors as plasmonic materials. Heavily doped zinc oxide and indium oxide can exhibit losses that are nearly four times smaller than silver at the telecommunication wavelength with small negative real permittivity. In this paper, we present the development of a low loss semiconductor plasmonic material, aluminum doped zinc oxide (AZO).

Citation Download Citation

Gururaj V. Naik, Vladimir M. Shalaev, and Alexandra Boltasseva "Semiconductor plasmonic metamaterials for near-infrared and telecommunication wavelength", Proc. SPIE 7754, Metamaterials: Fundamentals and Applications III, 77540M (10 September 2010); https://doi.org/10.1117/12.863631

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