Catalyst-free GaN nanowire growth and optoelectronic characterization

Krist A. Bertness; Norman A. Sanford; John B Schlager

doi:10.1117/12.859950

27 August 2010 Catalyst-free GaN nanowire growth and optoelectronic characterization

Krist A. Bertness, Norman A. Sanford, John B Schlager

Proceedings Volume 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II; 776802 (2010) https://doi.org/10.1117/12.859950
Event: SPIE NanoScience + Engineering, 2010, San Diego, California, United States

Abstract

We discuss the present state-of-the-art concerning the growth mechanism, optical luminescence and electrical properties for GaN nanowires grown with catalyst-free molecular beam epitaxy. These nanowires are essentially defect-free and display long photoluminescence lifetimes and carrier mobilities relative to epitaxially grown GaN films. The exclusion of crystalline defects comes from the ease with which strain-relieving dislocations can reach the sidewalls and terminate. The growth mechanism is based on variations in Ga sticking coefficients and surface energies of the sidewall planes and end facet planes. With control of the nucleation process through selective epitaxy on patterned substrates, a high degree of diameter, length and position control can be achieved. Common difficulties with interpretation of optical and electrical data with regard to internal quantum efficiency and mobility are also addressed.

Citation Download Citation

Krist A. Bertness, Norman A. Sanford, and John B Schlager "Catalyst-free GaN nanowire growth and optoelectronic characterization", Proc. SPIE 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II, 776802 (27 August 2010); https://doi.org/10.1117/12.859950

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