In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices

Ja-Yeon Kim; Min-Ki Kwon; Logeeswaran V. J.; Sonia Grego; M. Saif Islam

doi:10.1117/12.861607

27 August 2010 In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices

Ja-Yeon Kim, Min-Ki Kwon, Logeeswaran V. J., Sonia Grego, M. Saif Islam

Proceedings Volume 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II; 77680R (2010) https://doi.org/10.1117/12.861607
Event: SPIE NanoScience + Engineering, 2010, San Diego, California, United States

Abstract

We demonstrate a post-growth in-situ chlorine passivation for suppressing surface-dominant transport in Si nanowires (SiNWs). The leakage current of bridged SiNWs suppressed more than five orders of magnitude as a result of chlorine passivation while the shape and structural properties of the bridging NWs remain unaffected by the post-growth in-situ HCl passivation. The chlorine passivated SiNW surfaces were found to be beneficial to enhance the high immunity to environmental degradation.

Citation Download Citation

Ja-Yeon Kim, Min-Ki Kwon, Logeeswaran V. J., Sonia Grego, and M. Saif Islam "In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices", Proc. SPIE 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II, 77680R (27 August 2010); https://doi.org/10.1117/12.861607

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