Properties study of vanadium oxide thin films annealed in N[sub]2[/sub]/H[sub]2[/sub] ambience

Liulian Chen; Bin Ma; Yongming Shi; Houming Zhai; Dahan Qian

doi:10.1117/12.870722

15 November 2010 Properties study of vanadium oxide thin films annealed in N₂/H₂ ambience

Liulian Chen, Bin Ma, Yongming Shi, Houming Zhai, Dahan Qian

Proceedings Volume 7854, Infrared, Millimeter Wave, and Terahertz Technologies; 78541Y (2010) https://doi.org/10.1117/12.870722
Event: Photonics Asia 2010, 2010, Beijing, China

Abstract

Vanadium oxide thin films fabricated by reactive magnetron sputtering were annealed in N2/H2 ambience for 1, 3, 5 and 7 hours at 450°C. Changes in electrical & structural properties and chemical composition were studied. From R-T measurement and calculation, it was found that both square resistance(R) and temperature coefficient of resistance(TCR) of the films increased after annealing. Atomic force microscopy(AFM) analysis revealed that both grain size and surface roughness were aggrandized greatly after annealing. X-ray diffraction(XRD) analysis showed that new phases V₂O₅(0 0 1) and VO₂(0 1 1) appeared in the annealed films and the grain size varied between 10~40nm. X-ray photo-electronic spectrum(XPS) analysis demonstrated variations in depth of the atomic ratios of O:V and the vanadium valence states distribution for different time annealed films. Following the above analysis, correlation between macroscopic and microscopic characteristics of the films is elaborated.

Citation Download Citation

Liulian Chen, Bin Ma, Yongming Shi, Houming Zhai, and Dahan Qian "Properties study of vanadium oxide thin films annealed in N₂/H₂ ambience", Proc. SPIE 7854, Infrared, Millimeter Wave, and Terahertz Technologies, 78541Y (15 November 2010); https://doi.org/10.1117/12.870722

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