Free-Carrier Absorption And Saturation Of Intervalence-Band Transitions In P-Type Semiconductor Quantum Wells

Yia-Chung Chang; R. B. James

doi:10.1117/12.940843

11 August 1987 Free-Carrier Absorption And Saturation Of Intervalence-Band Transitions In P-Type Semiconductor Quantum Wells

Yia-Chung Chang, R. B. James

Author Affiliations +

Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940843
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Calculations of free-carrier absorption in p-type semiconductor quantum wells as a function of carrier density, temperature and light intensity are reported. Valence band dispersions used in the calculation are obtained by a multi-band effective mass method which includes the effects of warping and heavy-light hole mixing. Carrier lifetimes are taken into account within the deformation potential approximation. Deviation of hole distribution from thermal equilibrium due to optical pumping is included in the calculation, and the saturation behavior is studied.

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Yia-Chung Chang and R. B. James "Free-Carrier Absorption And Saturation Of Intervalence-Band Transitions In P-Type Semiconductor Quantum Wells", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); https://doi.org/10.1117/12.940843

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