Theory Of An Electro-Optic Modulator Based On Quantum Wells In A Semiconductor etalon

D. R. P. Guy; N. Apsley; L. L. Taylor; S. J. Bass; P. C Klipstein

doi:10.1117/12.940840

11 August 1987 Theory Of An Electro-Optic Modulator Based On Quantum Wells In A Semiconductor etalon

D. R. P. Guy, N. Apsley, L. L. Taylor, S. J. Bass, P. C Klipstein

Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940840
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

We present the design of an electro-optic modulator which is based on the quantum-confined Stark effect (QCSE) in GaAs quantum wells contained within the central layer of a Fabry-Perot etalon. The etalon mirrors are quarter wave stacks of Ga0.7A10.3As and AlAs, eliminating the need for the application of anti-reflection coatings. p-i-n-doping is employed with the undoped Or stack sandwiched between doped mirrors, enabling electric fields of the order of 105Vcm-1 to be readily developed across the quantum wells. Placing a multiple quantum well structure within an etalon resonant cavity gives flexibility of design in terms of operating wavelength and mode: Light incident perpendicular to the QW stack is modulated through the operation of the QCSE on the QW excitons, either electro-refractively by a change in the real part of the QW refractive index producing a wavelength modulation of the narrow-band Fabry-Perot transmission resonance or in electro-absorptive mode. The semi-empirical theory uses conventional multilayer optical matrix methods together with a recent theory of the QCSE which has been tested against the results of electro-reflectance experiments. In electro-absorption mode we find a ratio of 19:1 on:off at 857.5nm for 8 quantum wells. In electro-refractive mode, using 32 wells, we predict modulation from 10% to 76% reflection at 883nm. These figures exclude substrate effects. Extension of the theory to other materials systems is readily accomplished. We present the reflectivity spectrum of a high quality etalon in In0.53Ga0.47As/InP and find good agreement with the predictions of the optical matrix model.

Citation Download Citation

D. R. P. Guy, N. Apsley, L. L. Taylor, S. J. Bass, and P. C Klipstein "Theory Of An Electro-Optic Modulator Based On Quantum Wells In A Semiconductor etalon", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); https://doi.org/10.1117/12.940840

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