Simulation of hot electron quantum well photovoltaic devices

H. Z. Fardi

doi:10.1117/12.874072

21 February 2011 Simulation of hot electron quantum well photovoltaic devices

H. Z. Fardi

Proceedings Volume 7933, Physics and Simulation of Optoelectronic Devices XIX; 793325 (2011) https://doi.org/10.1117/12.874072
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

The effects of carrier escape from quantum well (QW) and the interaction of hot electrons with crystal lattice are of importance to the physical understanding of QW hot carrier solar cells where the cooling dynamics in photo-excited structures affect the cell efficiency. The absorption of high-energy photons produces electron hole pairs with excess kinetic energy, which are dissipated to the lattice thru phonon scattering. These hot electrons alter the conversion efficiency in photovoltaic solar cells. We have studied the hot electron effect in an Al_xGa_1-xAs / GaAs structure with quantum wells placed in the intrinsic region similar to the device described in reference . Our results show that hot electrons lead to an increase in short circuit current. The increase in short circuit current is due to carriers escaping from the well without any significant recombination, which may also lead to a higher cell efficiency. These results support the experimental data recently published by others.

Citation Download Citation

H. Z. Fardi "Simulation of hot electron quantum well photovoltaic devices", Proc. SPIE 7933, Physics and Simulation of Optoelectronic Devices XIX, 793325 (21 February 2011); https://doi.org/10.1117/12.874072

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