III-nitride semiconductors for intersubband devices

Y. Kotsar; H. Machhadani; S. Sakr; P. K. Kandaswamy; M. Tchernycheva; E. Bellet-Amalric; F. H. Julien; E. Monroy

doi:10.1117/12.872893

24 January 2011 III-nitride semiconductors for intersubband devices

Y. Kotsar, H. Machhadani, S. Sakr, P. K. Kandaswamy, M. Tchernycheva, E. Bellet-Amalric, F. H. Julien, E. Monroy

Proceedings Volume 7945, Quantum Sensing and Nanophotonic Devices VIII; 79451D (2011) https://doi.org/10.1117/12.872893
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

Extending the intersubband transitions in III-nitride nanostructures from near-infrared to longer wavelengths might have significant consequences for critical applications like imaging, remote sensing and mine detection. In this work, we analyze the potential of polar AlGaN/GaN heterostructures for this relevant spectral range.

Citation Download Citation

Y. Kotsar, H. Machhadani, S. Sakr, P. K. Kandaswamy, M. Tchernycheva, E. Bellet-Amalric, F. H. Julien, and E. Monroy "III-nitride semiconductors for intersubband devices", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451D (24 January 2011); https://doi.org/10.1117/12.872893

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