Jill A. Nolde,1 Rory Stine,2 Eric M. Jackson,1 Chadwick L. Canedy,1 Igor Vurgaftman,1 Serguei I. Maximenko,3 Chaffra A. Affouda,1 Maria Gonzalez,3 Edward H. Aifer,1 Jerry R. Meyer1
1Naval Research Lab. (United States) 2Nova Research, Inc. (United States) 3Global Defense Technology & Systems, Inc. (United States)
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In order to be commercially viable, the type-II superlattice (T2SL) LWIR focal plane array technology will require the
development of effective passivation of exposed surfaces. Here we investigate the relationship between the thickness
and composition of the native oxide at the T2SL-SiO2 interface and the diode performance in terms of sidewall
resistivity. Device performance is compared between samples with untreated surfaces, those for which the native oxides
have been removed at various intervals prior to SiO2 deposition, and samples for which oxide growth was promoted by
ozone exposure with and without a prior oxide strip. InAs- and GaSb-capped pieces were processed in an identical
manner and studied using X-ray photoelectron spectroscopy (XPS). From these spectra, the compositions and
thicknesses of the surface oxides just prior to SiO2 deposition were determined, complementing the electrical
characterization of devices. Correlation of the performance and surface composition is presented.
Jill A. Nolde,Rory Stine,Eric M. Jackson,Chadwick L. Canedy,Igor Vurgaftman,Serguei I. Maximenko,Chaffra A. Affouda,Maria Gonzalez,Edward H. Aifer, andJerry R. Meyer
"Effect of the oxide-semiconductor interface on the passivation of
hybrid type-II superlattice long-wave infrared photodiodes", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451Y (24 January 2011); https://doi.org/10.1117/12.876320
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Jill A. Nolde, Rory Stine, Eric M. Jackson, Chadwick L. Canedy, Igor Vurgaftman, Serguei I. Maximenko, Chaffra A. Affouda, Maria Gonzalez, Edward H. Aifer, Jerry R. Meyer, "Effect of the oxide-semiconductor interface on the passivation of hybrid type-II superlattice long-wave infrared photodiodes," Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451Y (24 January 2011); https://doi.org/10.1117/12.876320