1W semiconductor based laser module with a narrow linewidth emitting near 1064nm

Stefan Spiessberger; Max Schiemangk; Alexander Sahm; Andreas Wicht; Hans Wenzel; Jörg Fricke; Götz Erbert

doi:10.1117/12.873518

16 February 2011 1W semiconductor based laser module with a narrow linewidth emitting near 1064nm

Stefan Spiessberger, Max Schiemangk, Alexander Sahm, Andreas Wicht, Hans Wenzel, Jörg Fricke, Götz Erbert

Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 795311 (2011) https://doi.org/10.1117/12.873518
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

We demonstrate a compact high-power master oscillator (MO) power amplifier (PA) laser module emitting near 1064 nm. The module is micro-integrated on a footprint of 50 x 10mm². The oscillator is a distributed Bragg reflector laser optimized for narrow linewidth operation. The amplifier consists of a ridge waveguide entry and a tapered section. The module features stable single-mode narrow linewidth emission at an output power of 1W and can be tuned mode-hop free by 450GHz.

Citation Download Citation

Stefan Spiessberger, Max Schiemangk, Alexander Sahm, Andreas Wicht, Hans Wenzel, Jörg Fricke, and Götz Erbert "1W semiconductor based laser module with a narrow linewidth emitting near 1064nm", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 795311 (16 February 2011); https://doi.org/10.1117/12.873518

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