Scatterometry for EUV lithography at the 22-nm node

Benjamin Bunday; Victor Vartanian; Liping Ren; George Huang; Cecilia Montgomery; Warren Montgomery; Alex Elia; Xiaoping Liu

doi:10.1117/12.881407

20 April 2011 Scatterometry for EUV lithography at the 22-nm node

Benjamin Bunday, Victor Vartanian, Liping Ren, George Huang, Cecilia Montgomery, Warren Montgomery, Alex Elia, Xiaoping Liu

Author Affiliations +

Proceedings Volume 7971, Metrology, Inspection, and Process Control for Microlithography XXV; 797120 (2011) https://doi.org/10.1117/12.881407
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Moore's Law continues to drive improvements to lithographic resolution to increase integrated circuit transistor density, improve performance, and reduce cost. For the 22 nm node and beyond, extreme ultraviolet lithography (EUVL) is a promising technology with λ=13.5 nm, a larger k₁ value and lower cost of ownership than other available technologies. For small feature sizes, process control will be increasingly challenging, as small features will create measurement uncertainties, yet with tighter specifications. Optical scatterometry is a primary candidate metrology for EUV lithography process control. Using simulation and experimental data, this work will explore scatterometry's application to a typical lithography process being used for EUV development, which should be representative of lithography processes that will be utilized for EUV High Volume manufacturing (HVM). EUV lithography will be performed using much thinner photoresist thicknesses than were used at the 248nm or 193nm lithography generations, and will probably include underlayers for adhesion improvement; these new processes conditions were investigated in this metrological study.

Citation Download Citation

Benjamin Bunday, Victor Vartanian, Liping Ren, George Huang, Cecilia Montgomery, Warren Montgomery, Alex Elia, and Xiaoping Liu "Scatterometry for EUV lithography at the 22-nm node", Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 797120 (20 April 2011); https://doi.org/10.1117/12.881407

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