Wavefront measurement for EUV lithography system through Hartmann sensor

A. Polo; F. Bociort; S. F. Pereira; H. P. Urbach

doi:10.1117/12.877044

20 April 2011 Wavefront measurement for EUV lithography system through Hartmann sensor

A. Polo, F. Bociort, S. F. Pereira, H. P. Urbach

Proceedings Volume 7971, Metrology, Inspection, and Process Control for Microlithography XXV; 79712R (2011) https://doi.org/10.1117/12.877044
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Accurate wavefront aberration measurement are essential for next-generation Extreme Ultraviolet (EUV) Lithography. During the past years several accurate interferometric techniques have been developed, but these techniques have limitation. In this work we discuss a different technique based on the Hartmann Wavefront Sensor that requires no interferometry. We present a mathematical model of this system and describe our experimental setup which demonstrates the feasibility and advantages in terms of dynamic range and accuracy compared to interferometric techniques.

Citation Download Citation

A. Polo, F. Bociort, S. F. Pereira, and H. P. Urbach "Wavefront measurement for EUV lithography system through Hartmann sensor", Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 79712R (20 April 2011); https://doi.org/10.1117/12.877044

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