Silicon SPAD with near-infrared enhanced spectral response

Francesco Panzeri; Angelo Gulinatti; Ivan Rech; Massimo Ghioni; Sergio Cova

doi:10.1117/12.887021

6 May 2011 Silicon SPAD with near-infrared enhanced spectral response

Francesco Panzeri, Angelo Gulinatti, Ivan Rech, Massimo Ghioni, Sergio Cova

Proceedings Volume 8072, Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing III; 807206 (2011) https://doi.org/10.1117/12.887021
Event: SPIE Optics + Optoelectronics, 2011, Prague, Czech Republic

Abstract

We introduce a novel SPAD device with high photon detection efficiency and good performances in terms of temporal resolution and dark count rate. The designed detectors are able to attain a PDE as high as 40% at a wavelength of 800 nm while keeping photon detection jitter below 100 ps. The device was fabricated with a suitable planar silicon technology process that allows the development of detector arrays.

Citation Download Citation

Francesco Panzeri, Angelo Gulinatti, Ivan Rech, Massimo Ghioni, and Sergio Cova "Silicon SPAD with near-infrared enhanced spectral response", Proc. SPIE 8072, Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing III, 807206 (6 May 2011); https://doi.org/10.1117/12.887021

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