Electrical transport in a hybrid organic/inorganic heterostructure

Howard Yu; Megan Harberts; Lei Fang; K. Deniz Bozdag; Chia-Yi Chen; A. J Epstein; E. Johnston-Halperin

doi:10.1117/12.894641

15 September 2011 Electrical transport in a hybrid organic/inorganic heterostructure

Howard Yu, Megan Harberts, Lei Fang, K. Deniz Bozdag, Chia-Yi Chen, A. J Epstein, E. Johnston-Halperin

Proceedings Volume 8100, Spintronics IV; 81001E (2011) https://doi.org/10.1117/12.894641
Event: SPIE NanoScience + Engineering, 2011, San Diego, California, United States

Abstract

We report the electrical transport properties of a hybrid organic/inorganic diode device consisting of a layer of an organic ferrimagnetic semiconductor V[TCNE]_x (x~2, TCNE: tetracyanoethylene; T_C ~ 400 K, EG ~ 0.5 eV, σ~ 10^-2 S/cm) and a GaAs/AlGaAs p-i-n diode. Comparison with a control excluding the V[TCNE]_x~2 reveals that the addition of the V[TCNE]_x~2 layer shifts the turn-on voltage and ideality of the diode in accordance with bulk V[TCNE]_x~2 properties. This result has implications for the use of inorganic systems as probes of spin physics in organic and molecular systems.

Citation Download Citation

Howard Yu, Megan Harberts, Lei Fang, K. Deniz Bozdag, Chia-Yi Chen, A. J Epstein, and E. Johnston-Halperin "Electrical transport in a hybrid organic/inorganic heterostructure", Proc. SPIE 8100, Spintronics IV, 81001E (15 September 2011); https://doi.org/10.1117/12.894641

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