Whole field curvature and residual stress determination of silicon wafers by reflectometry

Chi Seng Ng; Anand K. Asundi

doi:10.1117/12.894396

23 September 2011 Whole field curvature and residual stress determination of silicon wafers by reflectometry

Chi Seng Ng, Anand K. Asundi

Proceedings Volume 8105, Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors V; 81050N (2011) https://doi.org/10.1117/12.894396
Event: SPIE NanoScience + Engineering, 2011, San Diego, California, United States

Abstract

Reflectometry, a simple whole-field curvature measurement system using a novel computer aided phase shift reflection grating method has been improved to certain extend. The similar system was developed from our earlier works on Computer Aided Moiré Methods and Novel Techniques in Reflection Moiré, Experimental Mechanics (1994) in which novel structured light approach was shown for surface slope and curvature measurement. This method uses similar technology but coupled with a novel phase shift system to accurately measure surface profile, slope and curvature. In our previous paper, "Stress Measurement of thin wafer using Reflection Grating Method", the surface curvature and residual stresses were evaluated using the versatility of the proposed system.. The curvature of wafers due to the deposition of backside metallization was evaluated and compared with a commercially stress measurement system from KLA-Tencor. In this paper, some aspects of the work are extended. Our proposed system is calibrated using a reference flat mirror and spherical mirror certified by Zygo Corporation. The mirrors together with the camera calibration toolbox allow the system to acquire measurement accuracy that is demanded by semiconductor industry. Finally, the results obtained from Reflectometry are compared and contrast with results from KLA Tencor System.

Citation Download Citation

Chi Seng Ng and Anand K. Asundi "Whole field curvature and residual stress determination of silicon wafers by reflectometry", Proc. SPIE 8105, Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors V, 81050N (23 September 2011); https://doi.org/10.1117/12.894396

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