Nanowire based heterostructures: fundamental properties and applications

Martin Heiss; Carlo Colombo; Anna Fontcuberta i Morral

doi:10.1117/12.896471

16 September 2011 Nanowire based heterostructures: fundamental properties and applications

Martin Heiss, Carlo Colombo, Anna Fontcuberta i Morral

Proceedings Volume 8106, Nanoepitaxy: Materials and Devices III; 810603 (2011) https://doi.org/10.1117/12.896471
Event: SPIE NanoScience + Engineering, 2011, San Diego, California, United States

Abstract

In this paper the fundamental properties of heterostructures based on semiconductor nanowires synthesized with molecular beam epitaxy are reviewed. Special focus is given on surface passivation mechanisms with radial epitaxial passivation shells. The growth of radial p-i-n junctions in GaAs nanowires is discussed. Characterization of such nanowires on a single nanowire level is presented. The fundamental limits of single nanowire optical device performance are obtained by numerical simulation and discussed.

Citation Download Citation

Martin Heiss, Carlo Colombo, and Anna Fontcuberta i Morral "Nanowire based heterostructures: fundamental properties and applications", Proc. SPIE 8106, Nanoepitaxy: Materials and Devices III, 810603 (16 September 2011); https://doi.org/10.1117/12.896471

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