A high performance solution processable organic semiconductor material for OTFT devices

Christopher J. Newsome; Julian C. Carter; Richard J. Wilson; Jeremy H. Burroughes

doi:10.1117/12.896166

7 September 2011 A high performance solution processable organic semiconductor material for OTFT devices

Christopher J. Newsome, Julian C. Carter, Richard J. Wilson, Jeremy H. Burroughes

Proceedings Volume 8117, Organic Field-Effect Transistors X; 811710 (2011) https://doi.org/10.1117/12.896166
Event: SPIE Photonic Devices + Applications, 2011, San Diego, California, United States

Abstract

We demonstrate the performance of thin film transistor devices based on a solution processable organic semiconductor with a field effect mobility of up to 2.5cm²V^-1s^-1. The performance of the material is demonstrated in a top gate, bottom contact device architecture operational in air without the requirement for device encapsulation. From a device performance aspect, we also highlight the influence that contact resistance has on the mobility.

Citation Download Citation

Christopher J. Newsome, Julian C. Carter, Richard J. Wilson, and Jeremy H. Burroughes "A high performance solution processable organic semiconductor material for OTFT devices", Proc. SPIE 8117, Organic Field-Effect Transistors X, 811710 (7 September 2011); https://doi.org/10.1117/12.896166

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