Interfacial state density and terahertz radiation on oxide-GaAs interface

Chung-Chih Chang; Ming-Seng Hsu; Wei-Juann Chen; Yau-Chyr Wang; Wei-Yang Chou; Jen-Wei Huang

doi:10.1117/12.893218

7 September 2011 Interfacial state density and terahertz radiation on oxide-GaAs interface

Chung-Chih Chang, Ming-Seng Hsu, Wei-Juann Chen, Yau-Chyr Wang, Wei-Yang Chou, Jen-Wei Huang

Proceedings Volume 8120, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V; 81201B (2011) https://doi.org/10.1117/12.893218
Event: SPIE Photonic Devices + Applications, 2011, San Diego, California, United States

Abstract

The amplitude of terahertz radiation (THz) from a series of oxide films on GaAs was measured by time resolved THz emission system. The barrier heights and the densities of the interfacial states are determined from the PR intensity as a function of the pump power density. The oxide-GaAs structures fabricated by in situ molecular beam epitaxy exhibit low interfacial state densities in the range of 10¹¹ cm^-2. It is found that the amplitude of THz radiation from Al₂O₃^-, Ga²O³^-, and Ga₂O₃(Gd₂O₃)-GaAs structures are increases with interfacial electric field. The reason is that the electric field is lower than the "critical electric field", the amplitude is proportional to the product of the electric field and the number of photo-excited carriers. However, as the field higher than the critical electric field, sample of air-GaAs structure, the lower THz amplitude was obtained due to the maximum drift velocity declines slightly as the field increases.

Citation Download Citation

Chung-Chih Chang, Ming-Seng Hsu, Wei-Juann Chen, Yau-Chyr Wang, Wei-Yang Chou, and Jen-Wei Huang "Interfacial state density and terahertz radiation on oxide-GaAs interface", Proc. SPIE 8120, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V, 81201B (7 September 2011); https://doi.org/10.1117/12.893218

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