Paper
16 September 2011 Self-recovered InGaAs single photon avalanche detector with patterned Zn-diffused structure
James Cheng, Yu-Hwa Lo
Author Affiliations +
Abstract
In conventional InGaAs/InP single photon avalanche detectors, zinc diffusion is used to define the multiplication junction to reduce the dark count and maximize the detection efficiency. The device performance is very sensitive to process variations, and the diffusion process must be carefully calibrated and analyzed to minimize any edge breakdown effects. Here we present a much simpler design utilizing patterned zinc diffusion rings. The processing is simplified - a single diffusion compared to two diffusions in a conventional device; and the device performance is not as critical to the processing variations. The diffusion is performed on a self-quenching self-recovering epitaxial structure, resulting in free-running single photon detection efficiencies of 20% at 140 K, with a dark count rate of 8 kHz for a 22μm diameter device.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Cheng and Yu-Hwa Lo "Self-recovered InGaAs single photon avalanche detector with patterned Zn-diffused structure", Proc. SPIE 8154, Infrared Remote Sensing and Instrumentation XIX, 81540H (16 September 2011); https://doi.org/10.1117/12.895272
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KEYWORDS
Diffusion

Zinc

Single photon

Sensors

Indium gallium arsenide

Heterojunctions

Photomasks

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