Anomalous hall effect in arsenic-doped HgCdTe grown by Te-rich LPE

Guang-Yin Qiu; Chuan-Jie Zhang; Yan-Feng Wei; Xiao-Jing Chen; Qing-Qing Xu; Jian-Rong Yang

doi:10.1117/12.900672

8 September 2011 Anomalous hall effect in arsenic-doped HgCdTe grown by Te-rich LPE

Guang-Yin Qiu, Chuan-Jie Zhang, Yan-Feng Wei, Xiao-Jing Chen, Qing-Qing Xu, Jian-Rong Yang

Proceedings Volume 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications; 81932Z (2011) https://doi.org/10.1117/12.900672
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China

Abstract

The Hall Effect and resistivity of arsenic-doped HgCdTe epilayers grown by Te-rich liquid phase epitaxy (Te-rich LPE) have been measured in the temperature range between 20 and 300 K at a magnetic field of 2 kG. Some arsenic-doped HgCdTe layers show anomalous n-type characteristic after activation annealing. A simplified two-layer model is applied to describe the anomalous Hall Effect of the arsenic-doped HgCdTe layers. The results show that the anomalous characteristic of the epilayers is due to the n-type layer in the surface, which may be caused by the surface oxidation. Based on the model, a computer program is applied to fit the experimental curves of Hall parameters. The results show that the Hall parameters primarily depend on the charge density of the n-type surface layer. The theoretical curves based on the model are consistent well with the experimental data.

Citation Download Citation

Guang-Yin Qiu, Chuan-Jie Zhang, Yan-Feng Wei, Xiao-Jing Chen, Qing-Qing Xu, and Jian-Rong Yang "Anomalous hall effect in arsenic-doped HgCdTe grown by Te-rich LPE", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81932Z (8 September 2011); https://doi.org/10.1117/12.900672

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