Interface States And Fermi Level Pinning In CdSe Thin Film Solar Cells

H. Richter

doi:10.1117/12.941916

12 November 1987 Interface States And Fermi Level Pinning In CdSe Thin Film Solar Cells

H. Richter

Proceedings Volume 0823, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion VI; (1987) https://doi.org/10.1117/12.941916
Event: 31st Annual Technical Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, San Diego, CA, United States

Abstract

Polycrystalline n-CdSe MIS solar cells have been produced and investigated by I-U measurements and admittance spectroscopy. A high density of interface states (≥ 10¹³ cm^-2(eV)^-1) has been estimated, pos-sibly due to disorder phenomena at the n-CdSe surface.

Citation Download Citation

H. Richter "Interface States And Fermi Level Pinning In CdSe Thin Film Solar Cells", Proc. SPIE 0823, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion VI, (12 November 1987); https://doi.org/10.1117/12.941916

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