Paper
20 January 2012 Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices
J. P. Salvestrini, A. Ahaitouf, H. Srour, S. Gautier, T. Moudakir, B. Assouar, A. Ougazzaden
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Abstract
Metal-semiconductor-metal solar blind ultraviolet photodetectors have been fabricated using both BGaN-GaN and BGaN-AlN superlattices as active layers. A high internal gain (up to 3 × 104 for optical power in the nW range) is obtained with a highly reduced dark current thanks to the boron incorporation. In the high optical power regime (W range), the time response is in the nanosecond range, which is much smaller than that of GaNand ZnO-based ultraviolet photodetectors. Moreover, the boron incorporation in GaN material allows the tuning of the cutoff wavelength.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. P. Salvestrini, A. Ahaitouf, H. Srour, S. Gautier, T. Moudakir, B. Assouar, and A. Ougazzaden "Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices", Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82682S (20 January 2012); https://doi.org/10.1117/12.914800
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Cited by 8 scholarly publications and 3 patents.
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KEYWORDS
Palladium

Ultraviolet radiation

Boron

Gallium nitride

Photodetectors

Stereolithography

Superlattices

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