High sensitivity chemically amplified EUV resists through enhanced EUV absorption

Owendi Ongayi; Matthew Christianson; Matthew Meyer; Suzanne Coley; David Valeri; Amy Kwok; Mike Wagner; Jim Cameron; Jim Thackeray

doi:10.1117/12.916482

22 March 2012 High sensitivity chemically amplified EUV resists through enhanced EUV absorption

Owendi Ongayi, Matthew Christianson, Matthew Meyer, Suzanne Coley, David Valeri, Amy Kwok, Mike Wagner, Jim Cameron, Jim Thackeray

Author Affiliations +

Proceedings Volume 8322, Extreme Ultraviolet (EUV) Lithography III; 83220T (2012) https://doi.org/10.1117/12.916482
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Resolution, line edge roughness, sensitivity and low outgassing are the key focus points for extreme ultraviolet (EUV) resist materials. Sensitivity has become increasingly important so as to address throughput concerns in device manufacturing and compensate for the low power of EUV sources. Recent studies have shown that increasing the polymer linear absorption absorption coefficient in EUV resists translates to higher acid generation efficiency and good pattern formation. In this study, novel high absorbing polymer platforms are evaluated. The contributing effect of the novel absorbing chromophore to the resultant chemically amplified photoresist is evaluated and compared with a standard methacrylate PAG Bound Polymer (PBP) platform. We report that by increasing EUV absorption, we cleanly resolved 17 nm 1:1 line space can be achieved at a sensitivity of 14.5 mJ/cm², which is consistent with dose requirements dictated by the ITRS roadmap. We also probe the effect of fluorinated small molecule additives on acid yield generation (Dil C) at EUV of a PBP platform.

Citation Download Citation

Owendi Ongayi, Matthew Christianson, Matthew Meyer, Suzanne Coley, David Valeri, Amy Kwok, Mike Wagner, Jim Cameron, and Jim Thackeray "High sensitivity chemically amplified EUV resists through enhanced EUV absorption", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220T (22 March 2012); https://doi.org/10.1117/12.916482

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