Paper
23 March 2012 The novel top-coat material for RLS trade-off reduction in EUVL
Ryuji Onishi, Rikimaru Sakamoto, Noriaki Fujitani, Takafumi Endo, Bang-ching Ho
Author Affiliations +
Abstract
For the next generation lithography (NGL), several technologies have been proposed to achieve the 22nm-node devices and beyond. Extreme ultraviolet (EUV) lithography is one of the candidates for the next generation lithography. In EUV light source development, low power is one of the critical issue because of the low throughput, and another issue is Out of Band (OoB) light existing in EUV light. OoB is concerned to be the cause of deterioration for the lithography performance. In order to avoid this critical issue, we focused on development of the resist top coat material with OoB absorption property as Out of Band Protection Layer (OBPL). We designed this material having high absorbance around 240nm wavelength and high transmittance for EUV light. And this material aimed to improve sensitivity, resolution and LWR performance.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ryuji Onishi, Rikimaru Sakamoto, Noriaki Fujitani, Takafumi Endo, and Bang-ching Ho "The novel top-coat material for RLS trade-off reduction in EUVL", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83222D (23 March 2012); https://doi.org/10.1117/12.916341
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CITATIONS
Cited by 3 scholarly publications and 3 patents.
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KEYWORDS
Extreme ultraviolet

Lithography

Extreme ultraviolet lithography

Absorption

Transmittance

Contamination

Deep ultraviolet

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