CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 8325 > Article
Open Access Paper
8 March 2012 Factors that determine the optimum dose for sub-20nm resist systems: DUV, EUV, and e-beam options
Moshe Preil
Author Affiliations +
Proceedings Volume 8325, Advances in Resist Materials and Processing Technology XXIX; 832503 (2012) https://doi.org/10.1117/12.920024
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States
Abstract
As EUV and e-beam direct write (EBDW) technologies move closer to insertion into pilot production, questions regarding cost effectiveness take on increasing importance. One of the most critical questions is determining the optimum dose which balances the requirements for cost-effective throughput vs. imaging performance. To date most of the dose requirements have been dictated by the hardware side of the industry. The exposure tool manufacturers have a vested interest in specifying the fastest resists possible in order to maximize the throughput even if it comes at the expense of optimum resist performance. This is especially true for both EUV and EBDW where source power is severely limited. We will explore the cost-benefit tradeoffs which drive the equipment side of the industry, and show how these considerations lead to the current throughput and dose requirements for volume production tools. We will then show how the resulting low doses may lead to shot noise problems and a resulting penalty in resist performance. By comparison to the history of 248 nm DUV resist development we will illustrate how setting unrealistic initial targets for resist dose may lead to unacceptable tradeoffs in resist performance and subsequently long delays in the development of production worthy resists.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Moshe Preil "Factors that determine the optimum dose for sub-20nm resist systems: DUV, EUV, and e-beam options", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 832503 (8 March 2012); https://doi.org/10.1117/12.920024
PROCEEDINGS
 9 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Lens.org Logo
CITATIONS
Cited by 6 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Extreme ultraviolet
Photons
Deep ultraviolet
Line edge roughness
Lithography
Electron beam direct write lithography
Semiconducting wafers
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top