Tunable resin reactivity of spin-on dielectric by controlling synthesis process

Kwen Woo Han; Hyun-Ji Song; Mi-Young Kim; Eun Su Park; Hui Chan Yoon; Go Eun Kim; Sang Hak Lim; Sang Kyun Kim

doi:10.1117/12.916252

20 March 2012 Tunable resin reactivity of spin-on dielectric by controlling synthesis process

Kwen Woo Han, Hyun-Ji Song, Mi-Young Kim, Eun Su Park, Hui Chan Yoon, Go Eun Kim, Sang Hak Lim, Sang Kyun Kim

Proceedings Volume 8325, Advances in Resist Materials and Processing Technology XXIX; 83252B (2012) https://doi.org/10.1117/12.916252
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

In the recent semiconductor industry, as the device shrinks, spin-on dielectric (SOD) has been adopted as a widely used material because of its excellent gap-fill, efficient throughput on mass production and highly competitive initial cost of ownership. Among various semiconductor applications, SOD is especially valued as the suitable gap-fill material for shallow trench isolation (STI), because the previously adopted technology, high density plasma chemical vapor deposition (HDP-CVD), has a significant problem with void-free gap-fill on patterns with high aspect ratios. As SOD is spin-coated on those narrow patterns, planarization is one of the important requirements. On the course of our efforts on developing novel modified SOD materials, we discovered that the reactivity of each SOD resins has meaningful correlation with the degree of planarization. In this paper, three experiments have been illustrated to prove this correlation, 1) step coverage test, 2) humid air bubble test, and 3) film thickness shrinkage upon prebake. The SOD resin with lower reactivity turned out to exhibit 1) larger size of circle around silica-beads, 2) slower molecular weight growth under humid bubble condition, and 3) higher shrinkage upon prebake.

Citation Download Citation

Kwen Woo Han, Hyun-Ji Song, Mi-Young Kim, Eun Su Park, Hui Chan Yoon, Go Eun Kim, Sang Hak Lim, and Sang Kyun Kim "Tunable resin reactivity of spin-on dielectric by controlling synthesis process", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83252B (20 March 2012); https://doi.org/10.1117/12.916252

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