Effect of a delta-doping green emitting layer in white organic light-emitting device

Juan Zhao; Junsheng Yu; Yadong Jiang

doi:10.1117/12.977838

15 October 2012 Effect of a delta-doping green emitting layer in white organic light-emitting device

Juan Zhao, Junsheng Yu, Yadong Jiang

Proceedings Volume 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy; 84190B (2012) https://doi.org/10.1117/12.977838
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China

Abstract

White organic light-emitting devices (WOLEDs) based on a double-emitting layer (EML) structure were fabricated, while phosphorescent blue and yellow emitters were employed. An ultra-thin layer of non-doped green tris(2-phenylpyridine) iridium [Ir(ppy)₃], which was considered as delta-doping layer, was inserted between the two EMLs for optimization. Furthermore, effect of adjusting thickness of this thin layer on device performance was studied. The results showed that the optimized WOLED consisting of 1-nm Ir(ppy)₃ EML achieved a maximum luminance of 29,100 cd/m², maximum external quantum efficiency of 7%, maximum current efficiency of 25.3 cd/A and maximum power efficiency of 7.8 lm/W, together with low efficiency roll-off over a wide luminance range. Meanwhile, the white emission with Commission Internationale del’Eclariage (CIE) coordinates of (0.382,0.446) at a driving voltage of 10 V were observed. The performance enhancement is ascribed to improved charge carrier balance through introduction the highly efficient Ir(ppy)₃ as the thin delta-doping layer.

Citation Download Citation

Juan Zhao, Junsheng Yu, and Yadong Jiang "Effect of a delta-doping green emitting layer in white organic light-emitting device", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84190B (15 October 2012); https://doi.org/10.1117/12.977838

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available