A simulation of chrome migration and its prevention in photomask

Jong-Min Kim; Ik-Boum Hur; Dong-Heok Lee; Sang-Soo Choi

doi:10.1117/12.977217

29 June 2012 A simulation of chrome migration and its prevention in photomask

Jong-Min Kim, Ik-Boum Hur, Dong-Heok Lee, Sang-Soo Choi

Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 844104 (2012) https://doi.org/10.1117/12.977217
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan

Abstract

Scanner expose condition is simulated to reproduce Chrome (Cr) migration on COG mask, known as a new type of mask degradation, with high energy fluency ArF acceleration tool. Contact hole size is decreased by forming rim inside sidewall of contact hole. CD change is observed as expose energy accumulates. Bridge defect is found on the unexposed line end feature adjacent to grounded pattern. Grounded mask showed much worse Cr migration than not grounded one. It may be analogized that the driving forces of Cr migration is relatively higher ArF energy (6.8eV) than self diffusion activation energy of Cr (3.5eV). Isolated exposed pattern will be positively charged by photovoltaic effect. Electric field potential with adjacent ground pattern formed by photovoltaic effect possibly boosts the Cr migration and material loss. New prevention treatment has been developed to mitigate Cr migration and it worked quite well. Cr migration by ArF expose wasn't found even grounded condition.

Citation Download Citation

Jong-Min Kim, Ik-Boum Hur, Dong-Heok Lee, and Sang-Soo Choi "A simulation of chrome migration and its prevention in photomask", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 844104 (29 June 2012); https://doi.org/10.1117/12.977217

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