Terahertz quantum cascade laser sources based on difference-frequency generation: from passive nonlinearity to leaky THz waveguide device concept

A. Vizbaras; K. Vijayraghavan; R. W. Adams; G. Boehm; M. A. Belkin; M. C. Amann

doi:10.1117/12.929242

15 October 2012 Terahertz quantum cascade laser sources based on difference-frequency generation: from passive nonlinearity to leaky THz waveguide device concept

A. Vizbaras, K. Vijayraghavan, R. W. Adams, G. Boehm, M. A. Belkin, M. C. Amann

Author Affiliations +

Proceedings Volume 8496, Terahertz Emitters, Receivers, and Applications III; 849607 (2012) https://doi.org/10.1117/12.929242
Event: SPIE Optical Engineering + Applications, 2012, San Diego, California, United States

Abstract

GaInAs/AlInAs/InP quantum cascade lasers have established themselves as reliable laser sources in the mid-infrared region (3.8-10) μm, where they operate at room-temperature in continuous-wave with Watt-level output powers. However, wavelengths above this wavelength region are difficult to generate. At long wavelengths, devices suffer from increased free-carrier absorption and poor population inversion due to the short upper laser state lifetime, thus limiting their operation to cryogenic temperatures. An alternative way to generate new frequencies is the by means of nonlinear frequency mixing. For long-wavelengths, the process of difference frequency mixing is of particular interest, as it is possible to utilize the good performance of the mid-infrared QCLs, acting as pump sources, together with the giant nonlinear properties that can be realized in the intersubband transitions of the quantum wells. Moreover, the giant nonlinearity can be monolithically integrated with the pump sources, leading to a compact, electrically pumped room-temperature semiconductor laser source, emitting at terahertz frequencies. In our work, we present several different concepts of monolithic nonlinear quantum cascade laser sources, designed to emit in the THz range: devices with passive giant nonlinearities, active nonlinearities and, finally, devices with active nonlinearities, combined with novel THz waveguiding techniques. We will demonstrate how application of novel THz waveguiding techniques avoids the efficiency suppression the large free-carrier absorption at THz frequencies in the doped semiconductor layers enabling room-temperature operation up to 1.2 THz.

Citation Download Citation

A. Vizbaras, K. Vijayraghavan, R. W. Adams, G. Boehm, M. A. Belkin, and M. C. Amann "Terahertz quantum cascade laser sources based on difference-frequency generation: from passive nonlinearity to leaky THz waveguide device concept", Proc. SPIE 8496, Terahertz Emitters, Receivers, and Applications III, 849607 (15 October 2012); https://doi.org/10.1117/12.929242

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available