Paper
15 October 2012 Design and simulation of RF MEMS SPST shunt and SPDT shunt-shunt switches for X-band and Ku-band applications
Author Affiliations +
Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85491F (2012) https://doi.org/10.1117/12.925703
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
This paper describes the design and simulation of RF MEMS SPST shunt and SPDT shunt-shunt switches with modified coplanar waveguide (CPW) configuration for X-band and Ku-band applications exhibiting high isolation and low insertion loss. By modifying the basic CPW structure for a six-strip membrane having length 720 μm, the resonant frequency can be reduced from 33.5 GHz to 13.5 GHz with isolation as high as -30 dB(-63 dB at resonant frequency) in Ku-band. Similar results are also found in case SPST and SPDT switches with other membrane types.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manas Kumar Lenka, Amit Sharma, Jaibir Sharma, and Amitava DasGupta "Design and simulation of RF MEMS SPST shunt and SPDT shunt-shunt switches for X-band and Ku-band applications", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491F (15 October 2012); https://doi.org/10.1117/12.925703
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KEYWORDS
Switches

Single point diamond turning

Ku band

Microelectromechanical systems

X band

Inductance

Signal attenuation

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