Measurement and Analysis of Source/Drain Contact Resistance in FinFETs

Abhisek Dixit; Nadine Collaert; Malgorzata Jurczak

doi:10.1117/12.927370

15 October 2012 Measurement and analysis of source/drain contact resistance in FinFETs

Abhisek Dixit, Nadine Collaert, Malgorzata Jurczak

Author Affiliations +

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85493L (2012) https://doi.org/10.1117/12.927370
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

FinFET is a key device architecture for the 22-nm CMOS and beyond technology nodes. If special care is not taken, these devices could suffer from high series resistance due to the narrow width of their source/drain regions. Using the electrical characterization of fabricated devices, we extract and analyze the dominant component of this series resistance, namely the source/drain contact resistance.

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Abhisek Dixit, Nadine Collaert, and Malgorzata Jurczak "Measurement and analysis of source/drain contact resistance in FinFETs", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493L (15 October 2012); https://doi.org/10.1117/12.927370

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