Paper
29 November 2012 Quantum dot lasers and relevant nanoheterostructures
Alexey E. Zhukov, Natalia V. Kryzhanovskaya, Artem V. Savelyev, Alexey M. Nadtochiy, Ekaterina M. Arakcheeva, Fedor I. Zubov, Vladimir V. Korenev, Mikhail V. Maximov, Yuri M. Shernyakov, Marina M. Kulagina, Ilia A. Slovinskiy, Daniil A. Livshits, Alexandros Kapsalis, Charis Mesaritakis, Dimitris Syvridis, Alexander Mintairov
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Abstract
Spectral and power characteristics of QD stripe lasers operating in two-state lasing regime have been studied in a wide range of operation conditions. It was demonstrated that neither self-heating nor increase of the homogeneous broadening are responsible for quenching of the ground-state lasing beyond the two-state lasing threshold. It was found that difference in electron and hole capture rates strongly affects light-current curve. Modulation p-type doping is shown to enhance the peak power of GS lasing transition. Microring and microdisk structures (D = 4-9 μm) comprising 1.3 μm InAs/InGaAs quantum dots have been fabricated and studied by μ-PL and NSOM. Ground-state lasing was achieved well above root temperature (up to 380 K). Effect of inner diameter on threshold characteristics was evaluated.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexey E. Zhukov, Natalia V. Kryzhanovskaya, Artem V. Savelyev, Alexey M. Nadtochiy, Ekaterina M. Arakcheeva, Fedor I. Zubov, Vladimir V. Korenev, Mikhail V. Maximov, Yuri M. Shernyakov, Marina M. Kulagina, Ilia A. Slovinskiy, Daniil A. Livshits, Alexandros Kapsalis, Charis Mesaritakis, Dimitris Syvridis, and Alexander Mintairov "Quantum dot lasers and relevant nanoheterostructures", Proc. SPIE 8552, Semiconductor Lasers and Applications V, 855202 (29 November 2012); https://doi.org/10.1117/12.2009055
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Cited by 7 scholarly publications.
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KEYWORDS
Microrings

Near field scanning optical microscopy

Doping

Solids

Luminescence

Modulation

Quantum dots

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