Low-temperature characterization of a 1.55-µm multiple-quantum-well laser down to 10 K

Emmanuel Mercado; Dipendra Adhikari; Gennady A. Smolyakov; Marek Osiński

doi:10.1117/12.2010029

14 March 2013 Low-temperature characterization of a 1.55-μm multiple-quantum-well laser down to 10 K

Emmanuel Mercado, Dipendra Adhikari, Gennady A. Smolyakov, Marek Osiński

Proceedings Volume 8619, Physics and Simulation of Optoelectronic Devices XXI; 861913 (2013) https://doi.org/10.1117/12.2010029
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

A ridge-waveguide 1.55-μm semiconductor laser with a multiple-quantum-well carrier confinement structure was characterized from room temperature down to 10 K. The temperature dependence of important laser parameters, such as threshold current, series resistance, differential efficiency, and emission wavelength, extracted from standard L-I/I-V measurements, is reported. The applicability of the standard ideal-diode model of semiconductor laser at cryogenic temperatures is analyzed.

Citation Download Citation

Emmanuel Mercado, Dipendra Adhikari, Gennady A. Smolyakov, and Marek Osiński "Low-temperature characterization of a 1.55-μm multiple-quantum-well laser down to 10 K", Proc. SPIE 8619, Physics and Simulation of Optoelectronic Devices XXI, 861913 (14 March 2013); https://doi.org/10.1117/12.2010029

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