Direct green LED development in nano-patterned epitaxy

Christian Wetzel; Theeradetch Detchprohm

doi:10.1117/12.2007613

4 March 2013 Direct green LED development in nano-patterned epitaxy

Christian Wetzel, Theeradetch Detchprohm

Proceedings Volume 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII; 864104 (2013) https://doi.org/10.1117/12.2007613
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Blue LED progress has laid the ground works of nitride technology to tackle the higher challenge of longer wavelength direct emitters of green, yellow, and orange. Use of bulk GaN substrate allows leapfrogging epitaxy development and offers crystallographic planes that allow higher crystal perfection and a control over piezoelectric polarization. Their combination allows stabilization of emission wavelength with current. Further improvement is found in substrate patterning on the micro and nano-meter length scale where we find roughly equal performance enhancement due to both, enhancement in light extraction and enhanced crystalline perfection.

Citation Download Citation

Christian Wetzel and Theeradetch Detchprohm "Direct green LED development in nano-patterned epitaxy", Proc. SPIE 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII, 864104 (4 March 2013); https://doi.org/10.1117/12.2007613

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