Patterning at 6.5 nm wavelength using interference lithography

Nassir Mojarad; Michaela Vockenhuber; Li Wang; Bernd Terhalle; Yasin Ekinci

doi:10.1117/12.2011556

1 April 2013 Patterning at 6.5 nm wavelength using interference lithography

Nassir Mojarad, Michaela Vockenhuber, Li Wang, Bernd Terhalle, Yasin Ekinci

Proceedings Volume 8679, Extreme Ultraviolet (EUV) Lithography IV; 867924 (2013) https://doi.org/10.1117/12.2011556
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

We present the results of patterning chemically-amplified and inorganic resists at 6.5 nm wavelength using interference lithography. Well-resolved patterns down to 22 nm HP are obtained. Dose-dependent line-edge roughness and critical dimensions in the resolution range of 50-22 nm half-pitch are obtained using 13.5 and 6.5 nm wavelength. The performances of the resists are compared for both cases. Increased line-edge roughness is observed for patterning 6.5 nm compared to the patterning at 13.5 nm wavelength.

Citation Download Citation

Nassir Mojarad, Michaela Vockenhuber, Li Wang, Bernd Terhalle, and Yasin Ekinci "Patterning at 6.5 nm wavelength using interference lithography", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867924 (1 April 2013); https://doi.org/10.1117/12.2011556

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