Features of formation of high-k dielectric layer in w/ultrathin HfO2/Si (100) structures under annealing

Valery I. Rudakov; Elena A. Bogoyavlenskaya; Yury I. Denisenko; V. V. Naumov

doi:10.1117/12.2018205

8 January 2013 Features of formation of high-k dielectric layer in w/ultrathin HfO₂/Si (100) structures under annealing

Valery I. Rudakov, Elena A. Bogoyavlenskaya, Yury I. Denisenko, V. V. Naumov

Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 87000E (2013) https://doi.org/10.1117/12.2018205
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation

Abstract

The initial structures of two types – HfO₂(50 nm)/Si (100) and W(150 nm)/HfO₂(5 nm)/Si (100) – were prepared by radio frequency magnetron sputtering (RF-MS) in Ar⁺-plasma and further were subjected to the annealing at 500-950 °C followed by forming an ohmic contact to Si-substrate. Investigation of the first type structures show that differences in various crystalline modifications and kind of I-V curves strongly depend on conditions of growth of the HfO₂ films during RF-MS process where RF bias U_bias, applying to the substrate, is an effective parameter for quality and growth process control of the HfO₂ films. For the second type structures, the ultrathin HfO₂ films were grown at U_bias= -7 V, then an effect of RTA at 950 °C in a neutral atmosphere on both electrical characteristics and chemical state at interfaces was studied. In comparison with as-deposited structures, RTA leads to decrease in the both the maximum specific capacitance in accumulation of C-V characteristics (by 30 %) and the dielectric constant (from 27 to 23). The thermally activated processes of formation of WO_x phase at the W/HfO₂ interface and Hf-silicate phase (HfSi_xO_y) at the HfO₂/Si (100) interface were observed. The total thickness of formed oxide layer exceeded the thickness of as-deposited HfO₂ film by 30 %.

Citation Download Citation

Valery I. Rudakov, Elena A. Bogoyavlenskaya, Yury I. Denisenko, and V. V. Naumov "Features of formation of high-k dielectric layer in w/ultrathin HfO₂/Si (100) structures under annealing", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000E (8 January 2013); https://doi.org/10.1117/12.2018205

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