Semiconductor nanowire photoluminescence: spatial/polarization averaged coupling into leaky modes

R. Paniagua-Domínguez; G. Grzela; Jaime Gómez Rivas; J. A. Sánchez-Gil

doi:10.1117/12.2022860

11 September 2013 Semiconductor nanowire photoluminescence: spatial/polarization averaged coupling into leaky modes

R. Paniagua-Domínguez, G. Grzela, Jaime Gómez Rivas, J. A. Sánchez-Gil

Proceedings Volume 8808, Active Photonic Materials V; 88080J (2013) https://doi.org/10.1117/12.2022860
Event: SPIE NanoScience + Engineering, 2013, San Diego, California, United States

Abstract

Photoluminescence from finite semiconductor nanowires is theoretically investigated. We show experimentally the directional emission of polarized light from single InP nanowires through Fourier microphotoluminescence, thus demonstrating semiconductor nanowires behave as efficient optical nanoantennas. Numerical calculations for finite nanowires confirm such enhanced and directional emission. We anticipate the relevance of these results for the development of nanowire photon sources with optimized efficiency and controlled emission.

Citation Download Citation

R. Paniagua-Domínguez, G. Grzela, Jaime Gómez Rivas, and J. A. Sánchez-Gil "Semiconductor nanowire photoluminescence: spatial/polarization averaged coupling into leaky modes", Proc. SPIE 8808, Active Photonic Materials V, 88080J (11 September 2013); https://doi.org/10.1117/12.2022860

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