Enhanced optical second-harmonic generation from current-biased graphene on the substrates of Si and SiC

Yong Q. An; Daniel B. Dougherty; Jack E. Rowe; Andreas Sandin; Ji Ung Lee; Alain C. Diebold

doi:10.1117/12.2033421

28 September 2013 Enhanced optical second-harmonic generation from current-biased graphene on the substrates of Si and SiC

Yong Q. An, Daniel B. Dougherty, Jack E. Rowe, Andreas Sandin, Ji Ung Lee, Alain C. Diebold

Author Affiliations +

Proceedings Volume 8845, Ultrafast Imaging and Spectroscopy; 88451B (2013) https://doi.org/10.1117/12.2033421
Event: SPIE Optical Engineering + Applications, 2013, San Diego, California, United States

Abstract

We find that optical second-harmonic generation (SHG) in reflection from a chemical-vapor-deposition (CVD) graphene monolayer transferred onto a SiO₂/Si(001) substrate is enhanced about 3 times by the flow of direct (dc) electric current in graphene. We also find that optical SHG in reflection from a 4-layer-graphene film epitaxially grown on a vicinal SiC(0001) substrate is enhanced 25% by the flow of dc electric current in graphene. Measurements of rotationalanisotropy SHG from both samples revealed that the current-induced SHG varies strongly with the measurement location on graphene along the current flow direction. The enhancement of SHG from the graphene/SiO₂/Si(001) sample is due to current-associated charge trapping at the graphene/SiO₂ interface, which introduces a vertical electric field across the SiO₂/Si interface that produces electric field-induced SHG. The enhancement of SHG from the graphene/vicinal-SiC(0001) sample is due to the current-associated electric field at the graphene/SiC interface that produces electric field-induced SHG. The functions of the current-induced SHG varying with the measurement location are different for the CVD graphene/SiO₂/Si(001) sample and the epitaxial graphene/vicinal-SiC(0001) sample.

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Yong Q. An, Daniel B. Dougherty, Jack E. Rowe, Andreas Sandin, Ji Ung Lee, and Alain C. Diebold "Enhanced optical second-harmonic generation from current-biased graphene on the substrates of Si and SiC", Proc. SPIE 8845, Ultrafast Imaging and Spectroscopy, 88451B (28 September 2013); https://doi.org/10.1117/12.2033421

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KEYWORDS

Graphene

Second-harmonic generation

Silicon carbide

Electrodes

Interfaces

Silicon

Chemical vapor deposition

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