Hetero-engineering infrared detectors with type-II superlattices

Z.-B. Tian; E. A. DeCuir Jr.; N. Gautam; S. Krishna; P. S. Wijewarnasuriya; J. W. Pattison; N. Dhar; R. E. Welser; A. K. Sood

doi:10.1117/12.2032205

19 September 2013 Hetero-engineering infrared detectors with type-II superlattices

Z.-B. Tian, E. A. DeCuir Jr., N. Gautam, S. Krishna, P. S. Wijewarnasuriya, J. W. Pattison, N. Dhar, R. E. Welser, A. K. Sood

Author Affiliations +

Proceedings Volume 8868, Infrared Sensors, Devices, and Applications III; 88680L (2013) https://doi.org/10.1117/12.2032205
Event: SPIE Optical Engineering + Applications, 2013, San Diego, California, United States

Abstract

InAs/GaSb type-II superlattices (T2-SLs) are of great interest as they provide a lot of band engineering flexibility. A wide variety of unipolar barrier structures have been investigated with this material system. In this report, we will present our recent work on the development of low noise long-wave infrared (LWIR) InAs/GaSb T2-SLs photodetectors. By adopting a so-called pBiBn design, the dark current of LWIR photodetectors is greatly suppressed. The LWIR pBiBn device has demonstrated a dark current density as low as 1.42×10^-5 A/cm² at -60 mV, and R₀A of 5365 Ωcm² at 76 K. A peak detectivity at 7.8 μm of 7.7×10¹¹ cmHz^1/2W^-1 is obtained at 76 K. Further effort to reduce the operating bias is also reported. By refining the energy-band alignment, a 2-μm-thick LWIR pBiBn device has demonstrated a single pass (no AR coating) quantum efficiency of 20% at 10 μm under zero-bias at 77 K. We have recently extended our efforts to further reduce the dark current by using an interband cascade (IC) photodetector structure. Some further details about the device operation and results will be discussed.

Citation Download Citation

Z.-B. Tian, E. A. DeCuir Jr., N. Gautam, S. Krishna, P. S. Wijewarnasuriya, J. W. Pattison, N. Dhar, R. E. Welser, and A. K. Sood "Hetero-engineering infrared detectors with type-II superlattices", Proc. SPIE 8868, Infrared Sensors, Devices, and Applications III, 88680L (19 September 2013); https://doi.org/10.1117/12.2032205

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